Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TSM120N10PQ56 RLG
RFQ
VIEW
RFQ
1,101
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 100V 58A 8PDFN - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 36W (Tc) N-Channel - 100V 58A (Tc) 12 mOhm @ 30A, 10V 4V @ 250µA 145nC @ 10V 3902pF @ 30V 10V ±20V
BUK9M156-100EX
RFQ
VIEW
RFQ
2,055
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 9.3A LFPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33 36W (Tc) N-Channel - 100V 9.3A (Tc) 150 mOhm @ 5A, 10V 2.1V @ 1mA 7.4nC @ 5V 695pF @ 25V 5V ±10V