- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,400
In-stock
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Infineon Technologies | MOSFET N-CH 100V 80A TO-263 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 250W (Tc) | N-Channel | - | 100V | 80A (Tc) | 14 mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,884
In-stock
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STMicroelectronics | MOSFET N-CH 100V 120A H2PAK-2 | STripFET™ III | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 9.3 mOhm @ 60A, 10V | 4V @ 250µA | 57nC @ 10V | 3305pF @ 25V | 10V | ±20V | |||
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VIEW |
2,092
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A D2PAK-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 2.7 mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | 10300pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,572
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | |||
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|
VIEW |
3,715
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,226
In-stock
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Texas Instruments | MOSFET N-CH 100V 200A DDPAK-3 | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DDPAK/TO-263-3 | 250W (Tc) | N-Channel | - | 100V | 200A (Ta) | 5.6 mOhm @ 90A, 10V | 3.2V @ 250µA | 57nC @ 10V | 5060pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,682
In-stock
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STMicroelectronics | MOSFET N-CH 100V 90A H2PAK-2 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 250W (Tc) | N-Channel | - | 100V | 110A (Tc) | 3.9 mOhm @ 55A, 10V | 4.5V @ 250µA | 117nC @ 10V | 8115pF @ 50V | 10V | ±20V | |||
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VIEW |
2,665
In-stock
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Texas Instruments | MOSFET N-CH 100V TO-263-3 | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DDPAK/TO-263-3 | 250W (Tc) | N-Channel | - | 100V | 200A (Ta) | 5.6 mOhm @ 90A, 10V | 3.2V @ 250µA | 57nC @ 10V | 5060pF @ 50V | 6V, 10V | ±20V | |||
