- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,904
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 64A D2PAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 64A (Tc) | 19 mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,950
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 63A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 63A (Tc) | 20 mOhm @ 25A, 10V | 4V @ 1mA | - | 4373pF @ 25V | 10V | ±20V | |||
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VIEW |
1,909
In-stock
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ON Semiconductor | MOSFET N-CH 100V 56A D2PAK | Automotive, AEC-Q101, UltraFET™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
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VIEW |
918
In-stock
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ON Semiconductor | MOSFET N-CH 100V 56A D2PAK | Automotive, AEC-Q101, UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 10V | 2000pF @ 25V | 10V | ±20V | |||
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VIEW |
1,583
In-stock
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ON Semiconductor | MOSFET N-CH 100V 56A D2PAK | UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
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VIEW |
1,902
In-stock
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Infineon Technologies | MOSFET N-CH 100V 88A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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VIEW |
3,604
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
