- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,445
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1.5A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 100V | 1.5A (Tc) | 540 mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,881
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1.1A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,738
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1.5A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 100V | 1.5A (Tc) | 540 mOhm @ 900mA, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
