- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,359
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.2 mOhm @ 50A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,682
In-stock
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STMicroelectronics | MOSFET N-CH 100V 90A H2PAK-2 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 250W (Tc) | N-Channel | - | 100V | 110A (Tc) | 3.9 mOhm @ 55A, 10V | 4.5V @ 250µA | 117nC @ 10V | 8115pF @ 50V | 10V | ±20V |