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16 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,148
In-stock
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EPC | TRANS GAN 100V 11A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 11A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | 520pF @ 50V | 5V | +6V, -5V | |||
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VIEW |
656
In-stock
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EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Obsolete | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | 205pF @ 50V | 5V | +6V, -5V | |||
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VIEW |
3,652
In-stock
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EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 12.5pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
1,506
In-stock
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EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
2,999
In-stock
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EPC | TRANS GAN 100V 0.5A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
3,125
In-stock
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EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V | |||
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VIEW |
2,186
In-stock
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EPC | TRANS GAN 100V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 2.7A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
1,038
In-stock
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EPC | TRANS GAN 100V 3MOHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 60A (Ta) | 3.2 mOhm @ 25A, 5V | 2.5V @ 12mA | - | 1500pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
1,818
In-stock
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EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
2,623
In-stock
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EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 16A (Ta) | 7 mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | 685pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
902
In-stock
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EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
2,564
In-stock
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EPC | TRANS GAN 100V 18A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 18A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | 420pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
2,299
In-stock
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EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | 220pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
1,361
In-stock
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EPC | TRANS GAN 100V 550MOHM BUMPED DI | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1.7A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 14pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
2,750
In-stock
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EPC | TRANS GAN 100V 2.8OHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
2,681
In-stock
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EPC | TRANS GAN 100V 1A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 100V | 1A (Ta) | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | 5V | +6V, -4V |