- Manufacture :
- Series :
- Part Status :
- Technology :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 13 mOhm @ 10.3A, 10V (2)
- 13.4 mOhm @ 30A, 10V (1)
- 16 mOhm @ 11A, 5V (1)
- 160 mOhm @ 500mA, 5V (1)
- 22 mOhm @ 8.2A, 10V (2)
- 3.2 mOhm @ 25A, 5V (1)
- 3.3 Ohm @ 50mA, 5V (2)
- 30 mOhm @ 6A, 5V (1)
- 35 mOhm @ 5.7A, 10V (2)
- 4 mOhm @ 30A, 5V (2)
- 5.6 mOhm @ 30A, 10V (1)
- 550 mOhm @ 100mA, 5V (2)
- 62 mOhm @ 5A, 10V (3)
- 65 mOhm @ 1A, 5V (1)
- 7 mOhm @ 16A, 5V (1)
- 7 mOhm @ 25A, 5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
25 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
946
In-stock
|
EPC | MOSFET N-CH 100V 1.7A DIE | - | Obsolete | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1.7A (Ta) | - | 2.5V @ 600µA | - | 90pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
1,543
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,751
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
730
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,107
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 10.3A (Ta), 60A (Tc) | 13 mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | 2210pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,652
In-stock
|
EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 12.5pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
1,506
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
2,999
In-stock
|
EPC | TRANS GAN 100V 0.5A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
770
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,378
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9A WDSON-2 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.8W (Ta), 78W (Tc) | N-Channel | - | 100V | 9A (Ta), 83A (Tc) | 5.6 mOhm @ 30A, 10V | 3.5V @ 100µA | 74nC @ 10V | 5500pF @ 50V | 6V, 10V | ±20V | |||
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|
VIEW |
3,653
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10.3A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 10.3A (Ta), 60A (Tc) | 13 mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | 2210pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,636
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,956
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9A WDSON-2 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 43W (Tc) | N-Channel | - | 100V | 9A (Ta), 40A (Tc) | 13.4 mOhm @ 30A, 10V | 3.5V @ 40µA | 30nC @ 10V | 2300pF @ 50V | 6V, 10V | ±20V | |||
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|
VIEW |
1,227
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,370
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,186
In-stock
|
EPC | TRANS GAN 100V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 2.7A (Ta) | 160 mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
1,038
In-stock
|
EPC | TRANS GAN 100V 3MOHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 60A (Ta) | 3.2 mOhm @ 25A, 5V | 2.5V @ 12mA | - | 1500pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
1,818
In-stock
|
EPC | TRANS GAN 100V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 48A (Ta) | 4 mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | 1530pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
2,623
In-stock
|
EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 16A (Ta) | 7 mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | 685pF @ 50V | 5V | +6V, -4V | |||
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|
VIEW |
902
In-stock
|
EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
2,564
In-stock
|
EPC | TRANS GAN 100V 18A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 18A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | 420pF @ 50V | 5V | +6V, -4V | |||
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|
VIEW |
2,299
In-stock
|
EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | - | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | 220pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
1,361
In-stock
|
EPC | TRANS GAN 100V 550MOHM BUMPED DI | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1.7A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 14pF @ 50V | 5V | +6V, -4V | |||
|
|
VIEW |
2,750
In-stock
|
EPC | TRANS GAN 100V 2.8OHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 500mA (Ta) | 3.3 Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | 8.4pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
2,681
In-stock
|
EPC | TRANS GAN 100V 1A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1A (Ta) | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | 5V | +6V, -4V | |||
