- Series :
- Part Status :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,998
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,046
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.7A (Ta) | 300 mOhm @ 1.7A, 10V | 4V @ 1mA | - | 550pF @ 25V | 10V | ±20V | |||
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VIEW |
1,063
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.7A (Ta) | 310 mOhm @ 1.7A, 5V | 2V @ 1mA | - | 520pF @ 25V | 5V | ±14V | |||
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|
VIEW |
2,194
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,889
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,313
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
760
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.1A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,150
In-stock
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Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
3,286
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.2A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,738
In-stock
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Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,335
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.8A (Ta) | 240 mOhm @ 1.8A, 10V | 4V @ 218µA | 9.3nC @ 10V | 265pF @ 25V | 10V | ±20V | |||
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VIEW |
3,222
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,842
In-stock
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Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | |||
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|
VIEW |
1,133
In-stock
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Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,649
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | |||
