Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDMA86108LZ
RFQ
VIEW
RFQ
1,830
In-stock
ON Semiconductor MOSFET N-CH 100V 2.2A 6MLP PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) N-Channel 100V 2.2A (Ta) 243 mOhm @ 2.2A, 10V 3V @ 250µA 3nC @ 10V 163pF @ 50V 4.5V, 10V ±20V
FDMA86108LZ
RFQ
VIEW
RFQ
3,331
In-stock
ON Semiconductor MOSFET N-CH 100V 2.2A 6MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) N-Channel 100V 2.2A (Ta) 243 mOhm @ 2.2A, 10V 3V @ 250µA 3nC @ 10V 163pF @ 50V 4.5V, 10V ±20V
FDMA86108LZ
RFQ
VIEW
RFQ
3,963
In-stock
ON Semiconductor MOSFET N-CH 100V 2.2A 6MLP PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-MicroFET (2x2) 2.4W (Ta) N-Channel 100V 2.2A (Ta) 243 mOhm @ 2.2A, 10V 3V @ 250µA 3nC @ 10V 163pF @ 50V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,660
In-stock
Infineon Technologies MOSFET N-CH 100V 6PQFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
957
In-stock
Infineon Technologies MOSFET N-CH 100V 6PQFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
1,642
In-stock
Infineon Technologies MOSFET N-CH 100V 6PQFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V