- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,144
In-stock
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IXYS | MOSFET N-CH 100V 334A SMPD | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 24-PowerSMD, 21 Leads | 24-SMPD | 680W (Tc) | N-Channel | - | 100V | 334A (Tc) | 2.6 mOhm @ 60A, 10V | 5V @ 8mA | 670nC @ 10V | 4700pF @ 10V | 10V | ±20V | |||
|
VIEW |
737
In-stock
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IXYS | MOSFET N-CH 100V 180A TO-263AA | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 480W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6 mOhm @ 50A, 10V | 4V @ 250µA | 185nC @ 10V | 10500pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,322
In-stock
|
IXYS | MOSFET N-CH 100V 130A TO-263AA | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 360W (Tc) | N-Channel | - | 100V | 130A (Tc) | 9.1 mOhm @ 65A, 10V | 4.5V @ 1mA | 130nC @ 10V | 6600pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,297
In-stock
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IXYS | MOSFET N-CH 100V 320A TO-26 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 1000W (Tc) | N-Channel | - | 100V | 320A (Tc) | 3.5 mOhm @ 100A, 10V | 4V @ 250µA | 430nC @ 10V | 26000pF @ 25V | 10V | ±20V | |||
