- Packaging :
- Operating Temperature :
- Power Dissipation (Max) :
-
- 1.2W (Ta) (3)
- 1.6W (Ta), 48W (Tc) (3)
- 1.6W (Ta), 61W (Tc) (3)
- 1.6W (Ta), 78W (Tc) (3)
- 1.8W (Ta) (3)
- 125W (Tc) (3)
- 156W (Tc) (3)
- 157W (Tc) (3)
- 2.5W (Ta) (3)
- 2.5W (Ta), 54W (Tc) (1)
- 2.5W (Ta), 67W (Tc) (1)
- 375W (Tc) (1)
- 50W (Tc) (3)
- 700mW (Ta), 27W (Tc) (3)
- 700mW (Ta), 42W (Tc) (3)
- 800mW (Ta), 142W (Tc) (3)
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 13.6 mOhm @ 12A, 10V (3)
- 16 mOhm @ 8.5A, 10V (3)
- 2.4 mOhm @ 80A, 10V (1)
- 33 mOhm @ 4.7A, 10V (3)
- 4.1 mOhm @ 35A, 10V (1)
- 4.5 mOhm @ 30A, 10V (3)
- 4.5 mOhm @ 32.5A, 10V (3)
- 4.5 mOhm @ 46A, 10V (3)
- 48 mOhm @ 3.5A, 10V (3)
- 6.3 mOhm @ 22.5A, 10V (1)
- 6.5 mOhm @ 27.5A, 10V (3)
- 69 mOhm @ 2A, 10V (9)
- 8.8 mOhm @ 16A, 10V (3)
- 9.7 mOhm @ 16.5A, 10V (3)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
42 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,888
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVIII-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 2.5W (Ta), 67W (Tc) | N-Channel | - | 100V | 92A (Ta), 70A (Tc) | 4.1 mOhm @ 35A, 10V | 2.5V @ 1mA | 75nC @ 10V | 6.3nF @ 50V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
696
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVIII-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220SM(W) | 375W (Tc) | N-Channel | - | 100V | 160A (Ta) | 2.4 mOhm @ 80A, 10V | 3.5V @ 1mA | 122nC @ 10V | 10100pF @ 10V | 6V, 10V | ±20V | |||
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|
VIEW |
3,310
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVIII-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 2.5W (Ta), 54W (Tc) | N-Channel | - | 100V | 66A (Ta), 45A (Tc) | 6.3 mOhm @ 22.5A, 10V | 2.5V @ 500µA | 55nC @ 10V | 4300pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,557
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 60A SOP ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 78W (Tc) | N-Channel | - | 100V | 60A (Tc) | 4.5 mOhm @ 30A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
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|
VIEW |
3,972
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 60A SOP ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 78W (Tc) | N-Channel | - | 100V | 60A (Tc) | 4.5 mOhm @ 30A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,041
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 60A SOP ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 78W (Tc) | N-Channel | - | 100V | 60A (Tc) | 4.5 mOhm @ 30A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,055
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
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|
VIEW |
661
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
|
|
VIEW |
2,568
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | |||
|
|
VIEW |
791
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | |||
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|
VIEW |
3,469
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | |||
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|
VIEW |
1,734
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | |||
|
VIEW |
742
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,875
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,987
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,404
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | |||
|
|
VIEW |
725
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | |||
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|
VIEW |
1,127
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V | |||
|
VIEW |
3,461
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 24A 8-SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 48W (Tc) | N-Channel | - | 100V | 24A (Tc) | 13.6 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,465
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 24A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 48W (Tc) | N-Channel | - | 100V | 24A (Tc) | 13.6 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 50V | 10V | ±20V | |||
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|
VIEW |
3,013
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 24A 8-SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 48W (Tc) | N-Channel | - | 100V | 24A (Tc) | 13.6 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,803
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,468
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,810
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,301
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,922
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,047
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,110
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 92A 8DSOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 100V | 92A (Tc) | 4.5 mOhm @ 46A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,637
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 92A 8DSOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 100V | 92A (Tc) | 4.5 mOhm @ 46A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,666
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 92A 8DSOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 100V | 92A (Tc) | 4.5 mOhm @ 46A, 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | 10V | ±20V | |||
