Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-3 150W (Tc) P-Channel - 100V 25A (Tc) 200 mOhm @ 15.8A, 10V 4V @ 250µA - 3000pF @ 25V 10V ±20V
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Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-3 150W (Tc) P-Channel - 100V 25A (Tc) 200 mOhm @ 15.8A, 10V 4V @ 250µA - 3000pF @ 25V 10V ±20V
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3,813
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Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AA, TO-3 TO-3 150W (Tc) P-Channel - 100V 25A (Tc) 200 mOhm @ 15.8A, 10V 4V @ 250µA - 3000pF @ 25V 10V ±20V
IRFP3710PBF
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Infineon Technologies MOSFET N-CH 100V 57A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 100V 57A (Tc) 25 mOhm @ 28A, 10V 4V @ 250µA 190nC @ 10V 3000pF @ 25V 10V ±20V