- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
644
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | ||||
VIEW |
3,052
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 5.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | P-Channel | - | 100V | 5.5A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | ||||
VIEW |
2,853
In-stock
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ON Semiconductor | MOSFET P-CH 100V 8.2A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38W (Tc) | P-Channel | - | 100V | 8.2A (Tc) | 290 mOhm @ 4.1A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | ||||
VIEW |
3,479
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | ||||
VIEW |
2,243
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | ||||
VIEW |
2,492
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | ||||
VIEW |
3,751
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | TO-220AB | - | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | - | - | ||||
VIEW |
2,633
In-stock
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ON Semiconductor | MOSFET P-CH 100V 11.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 75W (Tc) | P-Channel | - | 100V | 11.5A (Tc) | 290 mOhm @ 5.75A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V |