Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXYS MOSFET N-CH 100V 180A TO-220 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 480W (Tc) N-Channel - 100V 180A (Tc) 6 mOhm @ 50A, 10V 4V @ 250µA 185nC @ 10V 10500pF @ 25V 10V ±20V
IRFSL4010PBF
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2,655
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Infineon Technologies MOSFET N-CH 100V 180A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V