Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9540NL
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RFQ
1,891
In-stock
Infineon Technologies MOSFET P-CH 100V 23A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 140W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 11A, 10V 4V @ 250µA 97nC @ 10V 1300pF @ 25V 10V ±20V
NTD6415AN-1G
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RFQ
2,972
In-stock
ON Semiconductor MOSFET N-CH 100V 23A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 83W (Tc) N-Channel - 100V 23A (Tc) 55 mOhm @ 23A, 10V 4V @ 250µA 29nC @ 10V 700pF @ 25V 10V ±20V
IRF9540NLPBF
RFQ
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RFQ
2,535
In-stock
Infineon Technologies MOSFET P-CH 100V 23A TO262-3 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
IRFP9140N
RFQ
VIEW
RFQ
1,375
In-stock
Infineon Technologies MOSFET P-CH 100V 23A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 140W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 13A, 10V 4V @ 250µA 97nC @ 10V 1300pF @ 25V 10V ±20V
IRFP9140NPBF
RFQ
VIEW
RFQ
1,350
In-stock
Infineon Technologies MOSFET P-CH 100V 23A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 140W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 13A, 10V 4V @ 250µA 97nC @ 10V 1300pF @ 25V 10V ±20V
IRF9540NPBF
RFQ
VIEW
RFQ
2,697
In-stock
Infineon Technologies MOSFET P-CH 100V 23A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 140W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 11A, 10V 4V @ 250µA 97nC @ 10V 1300pF @ 25V 10V ±20V