Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET P-CH 100V 12.4A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole SC-94 TO-3PF 56W (Tc) P-Channel - 100V 12.4A (Tc) 190 mOhm @ 6.2A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IRFI1310N
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3,539
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Infineon Technologies MOSFET N-CH 100V 24A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 56W (Tc) N-Channel - 100V 24A (Tc) 36 mOhm @ 13A, 10V 4V @ 250µA 120nC @ 10V 1900pF @ 25V 10V ±20V
IRFU3911PBF
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1,582
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Infineon Technologies MOSFET N-CH 100V 14A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 56W (Tc) N-Channel - 100V 14A (Tc) 115 mOhm @ 8.4A, 10V 4V @ 250µA 32nC @ 10V 740pF @ 25V 10V ±20V
IRFI1310NPBF
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3,713
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Infineon Technologies MOSFET N-CH 100V 24A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 56W (Tc) N-Channel - 100V 24A (Tc) 36 mOhm @ 13A, 10V 4V @ 250µA 120nC @ 10V 1900pF @ 25V 10V ±20V