Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQH140N10
RFQ
VIEW
RFQ
2,953
In-stock
ON Semiconductor MOSFET N-CH 100V 140A TO-247 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 375W (Tc) N-Channel - 100V 140A (Tc) 10 mOhm @ 70A, 10V 4V @ 250µA 285nC @ 10V 7900pF @ 25V 10V ±25V
FQA140N10
RFQ
VIEW
RFQ
3,641
In-stock
ON Semiconductor MOSFET N-CH 100V 140A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 375W (Tc) N-Channel - 100V 140A (Tc) 10 mOhm @ 70A, 10V 4V @ 250µA 285nC @ 10V 7900pF @ 25V 10V ±25V
IRFSL4010PBF
RFQ
VIEW
RFQ
2,655
In-stock
Infineon Technologies MOSFET N-CH 100V 180A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel - 100V 180A (Tc) 4.7 mOhm @ 106A, 10V 4V @ 250µA 215nC @ 10V 9575pF @ 50V 10V ±20V
SUP70040E-GE3
RFQ
VIEW
RFQ
3,086
In-stock
Vishay Siliconix MOSFET N-CH 100V 120A TO220AB TrenchFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 100V 120A (Tc) 4 mOhm @ 20A, 10V 4V @ 250µA 120nC @ 10V 5100pF @ 50V 7.5V, 10V ±20V