- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,480
In-stock
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ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 66W (Tc) | P-Channel | - | 100V | 10.5A (Tc) | 300 mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | 1035pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,495
In-stock
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ON Semiconductor | MOSFET N-CH 100V 43A TO-3 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 193W (Tc) | N-Channel | - | 100V | 43A (Tc) | 40 mOhm @ 21.5A, 10V | 4V @ 250µA | 97nC @ 10V | 2270pF @ 25V | 10V | - | |||
|
VIEW |
982
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO-220 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.4 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,982
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 40A TO-220 | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 115W (Tc) | N-Channel | - | 100V | 40A (Tc) | 35 mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | 1550pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,879
In-stock
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Infineon Technologies | MOSFET N-CH 100V 120A TO220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 370W (Tc) | N-Channel | - | 100V | 120A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | 9620pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,003
In-stock
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ON Semiconductor | MOSFET N-CH 100V 80A TO-220AB | PowerTrench® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 310W (Tc) | N-Channel | - | 100V | 12A (Ta), 80A (Tc) | 9 mOhm @ 80A, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | 6V, 10V | ±20V | |||
