Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9540L
RFQ
VIEW
RFQ
1,564
In-stock
Vishay Siliconix MOSFET P-CH 100V 19A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - P-Channel - 100V 19A (Tc) 200 mOhm @ 11A, 10V 4V @ 250µA 61nC @ 10V 1400pF @ 25V 10V ±20V
IRF9530L
RFQ
VIEW
RFQ
703
In-stock
Vishay Siliconix MOSFET P-CH 100V 12A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - P-Channel - 100V 12A (Tc) 300 mOhm @ 7.2A, 10V 4V @ 250µA 38nC @ 10V 860pF @ 25V 10V ±20V
IRF9520L
RFQ
VIEW
RFQ
2,543
In-stock
Vishay Siliconix MOSFET P-CH 100V 6.8A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - P-Channel - 100V 6.8A (Tc) 600 mOhm @ 4.1A, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IRF9510L
RFQ
VIEW
RFQ
2,480
In-stock
Vishay Siliconix MOSFET P-CH 100V 4A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - P-Channel - 100V 4A (Tc) 1.2 Ohm @ 2.4A, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V
STB60NF10-1
RFQ
VIEW
RFQ
1,848
In-stock
STMicroelectronics MOSFET N-CH 100V 80A I2PAK STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 300W (Tc) N-Channel - 100V 80A (Tc) 23 mOhm @ 40A, 10V 4V @ 250µA 104nC @ 10V 4270pF @ 25V 10V ±20V