- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,204
In-stock
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Microsemi Corporation | MOSFET N-CH 100V 144A ISOTOP | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 450W (Tc) | N-Channel | - | 100V | 144A (Tc) | - | 4V @ 2.5mA | 450nC @ 10V | 10300pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,543
In-stock
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Microsemi Corporation | MOSFET N-CH 100V 225A ISOTOP | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 700W (Tc) | N-Channel | - | 100V | 225A (Tc) | - | 4V @ 5mA | 1050nC @ 10V | 21600pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,963
In-stock
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ON Semiconductor | MOSFET N-CH 100V 11.8A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 50W (Tc) | N-Channel | - | 100V | 11.8A (Tc) | 150 mOhm @ 5.9A, 10V | 5V @ 250µA | 40nC @ 10V | 1600pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,736
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,201
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,184
In-stock
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Microsemi Corporation | MOSFET N-CH 100V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ | 520W (Tc) | N-Channel | - | 100V | 100A (Tc) | 11 mOhm @ 500mA, 10V | 4V @ 2.5mA | 450nC @ 10V | 10300pF @ 25V | 10V | ±30V | |||
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|
VIEW |
963
In-stock
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Microsemi Corporation | MOSFET N-CH 100V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 625W (Tc) | N-Channel | - | 100V | 100A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | 10V | ±30V | |||
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VIEW |
3,102
In-stock
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IXYS | N-CHANNEL: LINEAR POWER MOSFETS | Linear L2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AA | 357W (Tc) | N-Channel | - | 100V | 64A (Tc) | 32 mOhm @ 500mA, 10V | 4.5V @ 250µA | 100nC @ 10V | 3620pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,250
In-stock
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ON Semiconductor | MOSFET P-CH 100V 6.6A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 44W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 530 mOhm @ 3.3A, 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | 10V | ±30V | |||
