- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,911
In-stock
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ON Semiconductor | MOSFET P-CH 100V 6A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.75W (Ta), 50W (Tc) | P-Channel | - | 100V | 6A (Tc) | 660 mOhm @ 3A, 10V | 4V @ 250µA | 22nC @ 10V | 840pF @ 25V | 10V | ±15V | |||
|
VIEW |
2,449
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | - | P-Channel | - | 100V | 6.6A (Ta) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
1,061
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 4.3A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | N-Channel | - | 100V | 4.3A (Tc) | 540 mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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VIEW |
862
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 5.6A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 100V | 5.6A (Tc) | 600 mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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VIEW |
2,693
In-stock
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IXYS | MOSFET P-CH 100V 26A TO-252 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150W (Tc) | P-Channel | - | 100V | 26A (Tc) | 90 mOhm @ 13A, 10V | 4.5V @ 250µA | 52nC @ 10V | 3820pF @ 25V | 10V | ±15V | |||
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VIEW |
3,674
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 3.1A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | - | 100V | 3.1A (Tc) | 1.2 Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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VIEW |
1,134
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 7.7A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | - | 100V | 7.7A (Tc) | 270 mOhm @ 4.6A, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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VIEW |
3,591
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
1,843
In-stock
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IXYS | MOSFET P-CH 100V 18A TO-252 | TrenchP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 83W (Tc) | P-Channel | - | 100V | 18A (Tc) | 120 mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | 2100pF @ 25V | 10V | ±15V | |||
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VIEW |
3,318
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 4.3A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | N-Channel | - | 100V | 4.3A (Tc) | 540 mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,526
In-stock
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Infineon Technologies | MOSFET P-CH 100V 13A DPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
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VIEW |
2,433
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 5.6A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 100V | 5.6A (Tc) | 600 mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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VIEW |
2,446
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 3.1A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | - | 100V | 3.1A (Tc) | 1.2 Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
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VIEW |
2,691
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 7.7A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | - | 100V | 7.7A (Tc) | 270 mOhm @ 4.6A, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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VIEW |
2,469
In-stock
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Infineon Technologies | MOSFET P-CH 100V 13A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
