Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 100V 144A ISOTOP POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 450W (Tc) N-Channel - 100V 144A (Tc) - 4V @ 2.5mA 450nC @ 10V 10300pF @ 25V 10V ±30V
IXFN170N10
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1,029
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IXYS MOSFET N-CH 100V 170A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 600W (Tc) N-Channel - 100V 170A (Tc) 10 mOhm @ 500mA, 10V 4V @ 8mA 515nC @ 10V 10300pF @ 25V 10V ±20V
IXFK170N10
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2,323
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IXYS MOSFET N-CH 100V 170A TO-264AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 560W (Tc) N-Channel - 100V 170A (Tc) 10 mOhm @ 500mA, 10V 4V @ 8mA 515nC @ 10V 10300pF @ 25V 10V ±20V
APT10M11B2VFRG
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3,184
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Microsemi Corporation MOSFET N-CH 100V 100A T-MAX POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ 520W (Tc) N-Channel - 100V 100A (Tc) 11 mOhm @ 500mA, 10V 4V @ 2.5mA 450nC @ 10V 10300pF @ 25V 10V ±30V