Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation MOSFET N-CH 100V 144A ISOTOP POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 450W (Tc) N-Channel 100V 144A (Tc) - 4V @ 2.5mA 450nC @ 10V 10300pF @ 25V 10V ±30V
APT10M11JVRU2
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3,104
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Microsemi Corporation MOSFET N-CH 100V 142A SOT227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 450W (Tc) N-Channel 100V 142A (Tc) 11 mOhm @ 71A, 10V 4V @ 2.5mA 300nC @ 10V 8600pF @ 25V 10V ±30V
APT10M11B2VFRG
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3,184
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Microsemi Corporation MOSFET N-CH 100V 100A T-MAX POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ 520W (Tc) N-Channel 100V 100A (Tc) 11 mOhm @ 500mA, 10V 4V @ 2.5mA 450nC @ 10V 10300pF @ 25V 10V ±30V
APT10M09B2VFRG
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963
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Microsemi Corporation MOSFET N-CH 100V 100A T-MAX POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 625W (Tc) N-Channel 100V 100A (Tc) 9 mOhm @ 50A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 10V ±30V
APT10M11JVRU3
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3,276
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Microsemi Corporation MOSFET N-CH 100V 142A SOT227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 450W (Tc) N-Channel 100V 142A (Tc) 11 mOhm @ 71A, 10V 4V @ 2.5mA 300nC @ 10V 8600pF @ 25V 10V ±30V