- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,877
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 5.4A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 5.4A (Ta) | 39 mOhm @ 3.2A, 10V | 4V @ 250µA | 56nC @ 10V | 1720pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,281
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 6.9A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 6.9A (Ta) | 26 mOhm @ 4.1A, 10V | 5.5V @ 250µA | 61nC @ 10V | 3180pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,201
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,856
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,112
In-stock
|
IXYS | MOSFET N-CH 100V 150A TO-264AA | HiPerFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 500W (Tc) | N-Channel | - | 100V | 150A (Tc) | 12 mOhm @ 75A, 10V | 4V @ 8mA | 360nC @ 10V | 9000pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,641
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.4A (Ta), 100A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | 5900pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,086
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.4A (Ta), 100A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | 5900pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,965
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.4A (Ta), 100A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | 5900pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,712
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
837
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 7.3A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 7.3A (Ta) | 22 mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | 1530pF @ 25V | 10V | ±20V | |||
