Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTX200N10L2
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RFQ
3,554
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IXYS MOSFET N-CH 100V 200A PLUS247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) N-Channel - 100V 200A (Tc) 11 mOhm @ 100A, 10V 4.5V @ 3mA 540nC @ 10V 23000pF @ 25V 10V ±20V
IXTX210P10T
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RFQ
3,327
In-stock
IXYS MOSFET P-CH 100V 210A PLUS247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 1040W (Tc) P-Channel - 100V 210A (Tc) 7.5 mOhm @ 105A, 10V 4.5V @ 250µA 740nC @ 10V 69500pF @ 25V 10V ±15V
IXFX180N10
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RFQ
2,503
In-stock
IXYS MOSFET N-CH 100V 180A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 560W (Tc) N-Channel - 100V 180A (Tc) 8 mOhm @ 90A, 10V 4V @ 8mA 390nC @ 10V 10900pF @ 25V 10V ±20V
IXTX170P10P
RFQ
VIEW
RFQ
693
In-stock
IXYS MOSFET P-CH 100V 170A PLUS247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 890W (Tc) P-Channel - 100V 170A (Tc) 12 mOhm @ 500mA, 10V 4V @ 1mA 240nC @ 10V 12600pF @ 25V 10V ±20V