Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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VS-FB180SA10P
RFQ
VIEW
RFQ
1,500
In-stock
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 180A SOT-227 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 480W (Tc) N-Channel 100V 180A (Tc) 6.5 mOhm @ 180A, 10V 4V @ 250µA 380nC @ 10V 10700pF @ 25V 10V ±20V
APT10M11JVRU2
RFQ
VIEW
RFQ
3,104
In-stock
Microsemi Corporation MOSFET N-CH 100V 142A SOT227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 450W (Tc) N-Channel 100V 142A (Tc) 11 mOhm @ 71A, 10V 4V @ 2.5mA 300nC @ 10V 8600pF @ 25V 10V ±30V
FB180SA10
RFQ
VIEW
RFQ
2,764
In-stock
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 180A SOT-227 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 480W (Tc) N-Channel 100V 180A (Tc) 6.5 mOhm @ 108A, 10V 4V @ 250µA 380nC @ 10V 10700pF @ 25V 10V ±20V
APT10M11JVRU3
RFQ
VIEW
RFQ
3,276
In-stock
Microsemi Corporation MOSFET N-CH 100V 142A SOT227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 450W (Tc) N-Channel 100V 142A (Tc) 11 mOhm @ 71A, 10V 4V @ 2.5mA 300nC @ 10V 8600pF @ 25V 10V ±30V
VS-FB190SA10
RFQ
VIEW
RFQ
833
In-stock
Vishay Semiconductor Diodes Division MOSFET N-CH 100V 190A SOT227 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 568W (Tc) N-Channel 100V 190A 6.5 mOhm @ 180A, 10V 4.35V @ 250µA 250nC @ 10V 10700pF @ 25V 10V ±20V