Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3480-AZ
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1,692
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Renesas Electronics America MOSFET N-CH 100V MP-25/TO-220 - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 1.5W (Ta), 84W (Tc) N-Channel - 100V 50A (Tc) 31 mOhm @ 25A, 10V - 74nC @ 10V 3600pF @ 10V 4.5V, 10V ±20V
SUP70090E-GE3
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2,797
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Vishay Siliconix MOSFET N-CH 100V 50A TO-220 ThunderFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 100V 50A (Tc) 8.9 mOhm @ 20A, 10V 4V @ 250µA 50nC @ 10V 1950pF @ 50V 7.5V, 10V ±20V
SUP70060E-GE3
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1,592
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Vishay Siliconix MOSFET N-CH 100V 131A TO-220 ThunderFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 100V 131A (Tc) 5.8 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3330pF @ 50V 7.5V, 10V ±20V
SUP70040E-GE3
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3,086
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Vishay Siliconix MOSFET N-CH 100V 120A TO220AB TrenchFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 100V 120A (Tc) 4 mOhm @ 20A, 10V 4V @ 250µA 120nC @ 10V 5100pF @ 50V 7.5V, 10V ±20V