Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRFB4410
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3,912
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Infineon Technologies MOSFET N-CH 100V 75A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 100V 75A (Tc) 10 mOhm @ 58A, 10V 4V @ 150µA 180nC @ 10V 5150pF @ 50V 10V ±20V
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3,154
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Vishay Siliconix MOSFET N-CH 100V 120A TO220AB Automotive, AEC-Q101, TrenchFET® Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 100V 120A (Tc) 9.5 mOhm @ 30A, 10V 3.5V @ 250µA 180nC @ 10V 8645pF @ 25V 10V ±20V
STP165N10F4
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2,879
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STMicroelectronics MOSFET N-CH 100V 120A TO-220 DeepGATE™, STripFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 315W (Tc) N-Channel - 100V 120A (Tc) 5.5 mOhm @ 60A, 10V 4V @ 250µA 180nC @ 10V 10500pF @ 25V 10V ±20V
IRFB4410PBF
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2,381
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Infineon Technologies MOSFET N-CH 100V 96A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 100V 88A (Tc) 10 mOhm @ 58A, 10V 4V @ 150µA 180nC @ 10V 5150pF @ 50V 10V ±20V
IRF5210PBF
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1,806
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Infineon Technologies MOSFET P-CH 100V 40A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) P-Channel - 100V 40A (Tc) 60 mOhm @ 24A, 10V 4V @ 250µA 180nC @ 10V 2700pF @ 25V 10V ±20V