Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF730BPBF
RFQ
VIEW
RFQ
1,153
In-stock
Vishay Siliconix MOSFET N-CH 400V 5.5A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 104W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 5V @ 250µA 18nC @ 10V 311pF @ 100V 10V ±30V
SIHF6N40D-E3
RFQ
VIEW
RFQ
2,159
In-stock
Vishay Siliconix MOSFET N-CH 400V 6A TO-220 FPAK - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 30W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 5V @ 250µA 18nC @ 10V 311pF @ 100V 10V ±30V
SIHP6N40D-GE3
RFQ
VIEW
RFQ
2,095
In-stock
Vishay Siliconix MOSFET N-CH 400V 6A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 104W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 5V @ 250µA 18nC @ 10V 311pF @ 100V 10V ±30V
SIHP6N40D-E3
RFQ
VIEW
RFQ
784
In-stock
Vishay Siliconix MOSFET N-CH 400V 6A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 104W (Tc) N-Channel 400V 6A (Tc) 1 Ohm @ 3A, 10V 5V @ 250µA 18nC @ 10V 311pF @ 100V 10V ±30V