Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP298L6327HUSA1
RFQ
VIEW
RFQ
685
In-stock
Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V
BSP298 E6327
RFQ
VIEW
RFQ
3,680
In-stock
Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V
BSP298H6327XUSA1
RFQ
VIEW
RFQ
1,152
In-stock
Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) - TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V
BSP298H6327XUSA1
RFQ
VIEW
RFQ
3,036
In-stock
Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) - TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V
BSP298H6327XUSA1
RFQ
VIEW
RFQ
772
In-stock
Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) - TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V