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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	FQU6N40CTU_NBEA001	RFQ VIEW	PDF RFQ	2,596 In-stock	ON Semiconductor	MOSFET N-CH 400V 4.5A IPAK		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	2.5W (Ta), 48W (Tc)	N-Channel	400V	4.5A (Tc)	1 Ohm @ 2.25A, 10V	4V @ 250µA	20nC @ 10V	625pF @ 25V	10V	±30V
	FQU6N40CTU	RFQ VIEW	PDF RFQ	698 In-stock	ON Semiconductor	MOSFET N-CH 400V 4.5A IPAK		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	2.5W (Ta), 48W (Tc)	N-Channel	400V	4.5A (Tc)	1 Ohm @ 2.25A, 10V	4V @ 250µA	20nC @ 10V	625pF @ 25V	10V	±30V
	IRFU320	RFQ VIEW	PDF RFQ	1,126 In-stock	Vishay Siliconix	MOSFET N-CH 400V 3.1A I-PAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	N-Channel	400V	3.1A (Tc)	1.8 Ohm @ 1.9A, 10V	4V @ 250µA	20nC @ 10V	350pF @ 25V	10V	±20V
	IRFU320PBF	RFQ VIEW	PDF RFQ	2,118 In-stock	Vishay Siliconix	MOSFET N-CH 400V 3.1A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	N-Channel	400V	3.1A (Tc)	1.8 Ohm @ 1.9A, 10V	4V @ 250µA	20nC @ 10V	350pF @ 25V	10V	±20V

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