- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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21 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,733
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
792
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,641
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
3,101
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,364
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,032
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,031
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 6.2A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | 200V | 6.2A (Tc) | 400 mOhm @ 3.7A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
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VIEW |
3,403
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
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VIEW |
2,940
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,336
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,260
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,064
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
3,184
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,582
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,567
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 16A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,236
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,972
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
1,513
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
1,104
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
2,777
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 9A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
2,599
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 6.2A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | N-Channel | 200V | 6.2A (Tc) | 400 mOhm @ 3.7A, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | 4V, 5V | ±10V |