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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
889
In-stock
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Global Power Technologies Group | MOSFET N-CH 900V 11A TO3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 416W (Tc) | N-Channel | - | 900V | 11A (Tc) | 900 mOhm @ 5.5A, 10V | 5V @ 250µA | 84nC @ 10V | 3240pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,720
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 156W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,550
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO220-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 156W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,821
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Digi-Reel® | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | |||
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|
VIEW |
1,299
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Cut Tape (CT) | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | |||
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|
VIEW |
1,086
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Tape & Reel (TR) | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | |||
|
VIEW |
746
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 34W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,239
In-stock
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ON Semiconductor | MOSFET N-CH 900V 11A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 300W (Tc) | N-Channel | - | 900V | 11A (Tc) | 1.1 Ohm @ 5.5A, 10V | 5V @ 250µA | 80nC @ 10V | 3290pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,456
In-stock
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Cree/Wolfspeed | MOSFET N-CH 900V 11A | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | D2PAK-7 | 50W (Tc) | N-Channel | - | 900V | 11A (Tc) | 360 mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | 15V | +18V, -8V | |||
|
VIEW |
902
In-stock
|
ON Semiconductor | MOSFET N-CH 900V 11A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 300W (Tc) | N-Channel | - | 900V | 11A (Tc) | 1.1 Ohm @ 5.5A, 10V | 5V @ 250µA | 80nC @ 10V | 3290pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,736
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO-220 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 156W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,552
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,272
In-stock
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STMicroelectronics | MOSFET N-CH 900V 11A TO-247 | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 230W (Tc) | N-Channel | - | 900V | 11A (Tc) | 880 mOhm @ 5.5A, 10V | 4.5V @ 100µA | 152nC @ 10V | 3500pF @ 25V | 10V | ±30V | |||
