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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,971
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | |||
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VIEW |
2,108
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | |||
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VIEW |
2,342
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | |||
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VIEW |
2,510
In-stock
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Vishay Siliconix | MOSFET N-CH 800V 2.8A IPAK | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V |