Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP80R600P7XKSA1
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3,016
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Infineon Technologies MOSFET N-CH 800V 8A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 60W (Tc) N-Channel 800V 8A (Tc) 600 mOhm @ 3.4A, 10V 3.5V @ 170µA 20nC @ 10V 570pF @ 500V 10V ±20V
IPP80R750P7XKSA1
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1,341
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Infineon Technologies MOSFET N-CH 800V 7A TO220-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 51W (Tc) N-Channel 800V 7A (Tc) 750 mOhm @ 2.7A, 10V 3.5V @ 140µA 17nC @ 10V 460pF @ 500V 10V ±20V
IPP80R900P7XKSA1
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2,472
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Infineon Technologies MOSFET N-CH 800V 6A TO220-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 45W (Tc) N-Channel 800V 6A (Tc) 900 mOhm @ 2.2A, 10V 3.5V @ 110µA 15nC @ 10V 350pF @ 500V 10V ±20V
IPP80R1K2P7XKSA1
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RFQ
640
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Infineon Technologies MOSFET N-CH 800V 4.5A TO220-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 37W (Tc) N-Channel 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V
IPP80R360P7XKSA1
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1,726
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Infineon Technologies MOSFET N-CH 800V 13A TO220-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 84W (Tc) N-Channel 800V 13A (Tc) 360 mOhm @ 5.6A, 10V 3.5V @ 280µA 30nC @ 10V 930pF @ 500V 10V ±20V