Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STW16N65M5
RFQ
VIEW
RFQ
2,978
In-stock
STMicroelectronics MOSFET N-CH 650V 12A TO-247 MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 90W (Tc) N-Channel - 650V 12A (Tc) 279 mOhm @ 6A, 10V 5V @ 250µA 31nC @ 10V 1250pF @ 100V 10V ±25V
STW18N65M5
RFQ
VIEW
RFQ
3,542
In-stock
STMicroelectronics MOSFET N CH 650V 15A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 110W (Tc) N-Channel - 650V 15A (Tc) 220 mOhm @ 7.5A, 10V 5V @ 250µA 31nC @ 10V 1240pF @ 100V 10V ±25V