- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,170
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,811
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,087
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,225
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO220FP | CoolMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 34.5W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,330
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,872
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
1,715
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3 | 34.5W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
1,976
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,292
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,768
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,167
In-stock
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Infineon Technologies | MOSFET N-CH 650V 20.7A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V |