- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,730
In-stock
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Vishay Siliconix | MOSFET N-CHAN 650V 23A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 202W (Tc) | N-Channel | - | 650V | 23A (Tc) | 158 mOhm @ 12A, 10V | 4V @ 250µA | 17nC @ 10V | 2780pF @ 100V | 10V | ±30V | |||
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VIEW |
625
In-stock
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Vishay Siliconix | MOSFET N-CHAN 650V 23A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 202W (Tc) | N-Channel | - | 650V | 23A (Tc) | 158 mOhm @ 12A, 10V | 4V @ 250µA | 17nC @ 10V | 2780pF @ 100V | 10V | ±30V | |||
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VIEW |
1,865
In-stock
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Vishay Siliconix | MOSFET N-CHAN 650V 23A POWERPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 202W (Tc) | N-Channel | - | 650V | 23A (Tc) | 158 mOhm @ 12A, 10V | 4V @ 250µA | 17nC @ 10V | 2780pF @ 100V | 10V | ±30V | |||
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VIEW |
2,547
In-stock
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IXYS | MOSFET N-CH 650V 12A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 180W (Tc) | N-Channel | - | 650V | 12A (Tc) | 300 mOhm @ 6A, 10V | 5V @ 250µA | 17nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,365
In-stock
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IXYS | MOSFET N-CH 650V 12A TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AA | 180W (Tc) | N-Channel | - | 650V | 12A (Tc) | 300 mOhm @ 6A, 10V | 5V @ 250µA | 17nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
2,445
In-stock
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IXYS | MOSFET N-CH 650V 12A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 650V | 12A (Tc) | 300 mOhm @ 6A, 10V | 5V @ 250µA | 17nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,166
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13A (Ta) | 380 mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V | |||
