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- Supplier Device Package :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,135
In-stock
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ON Semiconductor | SUPERFET3 650V DPAK PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 54W (Tc) | N-Channel | - | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
|
VIEW |
1,777
In-stock
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IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 450 mOhm @ 4A, 10V | 5V @ 250µA | 11nC @ 10V | 790pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,655
In-stock
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IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 450 mOhm @ 4A, 10V | 5V @ 250µA | 11nC @ 10V | 790pF @ 25V | 10V | ±30V | |||
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VIEW |
3,410
In-stock
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ON Semiconductor | SUPERFET3 650V TO220 PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 54W (Tc) | N-Channel | - | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
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VIEW |
812
In-stock
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ON Semiconductor | SUPERFET3 650V IPAK PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 54W (Tc) | N-Channel | - | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
|
VIEW |
1,948
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,740
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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|
VIEW |
988
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,262
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,051
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 3A (Ta) | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
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|
VIEW |
821
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 2.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 2.5A (Ta) | 2.51 Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
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VIEW |
2,937
In-stock
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ON Semiconductor | SUPERFET3 650V TO220F PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 24W (Tc) | N-Channel | - | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
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|
VIEW |
1,775
In-stock
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Infineon Technologies | MOSFET N-CH 8TSON | CoolMOS™ C6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Thin-PAK (5x6) | 26.6W (Tc) | N-Channel | - | 650V | 3A (Tc) | 1.5 Ohm @ 1A, 10V | 3.5V @ 100µA | 11nC @ 10V | 225pF @ 100V | 10V | ±20V | |||
