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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH 650V 2.6A TO252-3 | Active | - | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 29W (Tc) | N-Channel | 650V | 2.6A (Tc) | 3.4 Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6nC @ 10V | 93pF @ 100V | 10V | ±20V | |||
