- Manufacture :
- Series :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,824
In-stock
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STMicroelectronics | MOSFET N-CH 650V 27A D2PAK | MDmesh™ V | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | 650V | 27A (Tc) | 98 mOhm @ 13.5A, 10V | 5V @ 250µA | 83nC @ 10V | 3750pF @ 100V | 10V | ±25V | |||
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VIEW |
2,196
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 111W (Tc) | N-Channel | 650V | 27A (Tc) | 125 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | |||
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VIEW |
2,454
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 111W (Tc) | N-Channel | 650V | 27A (Tc) | 125 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | |||
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VIEW |
1,206
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 111W (Tc) | N-Channel | 650V | 27A (Tc) | 125 mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | 1544pF @ 400V | 10V | ±20V | |||
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VIEW |
1,650
In-stock
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Transphorm | MOSFET N-CH 650V 27A TO220 | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 104W (Tc) | N-Channel | 650V | 27A (Tc) | 72 mOhm @ 17A, 8V | 2.6V @ 400uA | 14nC @ 8V | 1130pF @ 400V | 8V | ±18V |