- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
912
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 7A (Ta) | 980 mOhm @ 3.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
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VIEW |
1,627
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 650V 3.5A IPAK | MDmesh™ M6 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 650V | 3.5A (Tc) | 1.5 Ohm @ 1.75A, 10V | 3.75V @ 250µA | 6nC @ 10V | 150pF @ 100V | 10V | ±25V | |||
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VIEW |
2,592
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 650V 4A IPAK | MDmesh™ M6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 650V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 3.75V @ 250µA | 5.1nC @ 10V | 170pF @ 100V | 10V | ±25V | |||
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VIEW |
1,455
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 650V 10A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 45W (Tc) | N-Channel | - | 650V | 10A (Tc) | 900 mOhm @ 2A, 10V | 4.5V @ 250µA | 34nC @ 10V | 1650pF @ 50V | 10V | ±30V | |||
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VIEW |
1,089
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 27.6A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 27.6A (Ta) | 110 mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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VIEW |
3,062
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 6A (Ta) | 1.11 Ohm @ 3A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
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VIEW |
1,480
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 8A (Ta) | 840 mOhm @ 4A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V |