Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK7A65D(STA4,Q,M)
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912
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 7A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 650V 7A (Ta) 980 mOhm @ 3.5A, 10V 4V @ 1mA 24nC @ 10V 1200pF @ 25V 10V ±30V
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1,627
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STMicroelectronics MOSFET N-CHANNEL 650V 3.5A IPAK MDmesh™ M6 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 650V 3.5A (Tc) 1.5 Ohm @ 1.75A, 10V 3.75V @ 250µA 6nC @ 10V 150pF @ 100V 10V ±25V
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2,592
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STMicroelectronics MOSFET N-CHANNEL 650V 4A IPAK MDmesh™ M6 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 650V 4A (Tc) 1.3 Ohm @ 2A, 10V 3.75V @ 250µA 5.1nC @ 10V 170pF @ 100V 10V ±25V
TSM10NC65CF C0G
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RFQ
1,455
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 650V 10A ITO220S - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 45W (Tc) N-Channel - 650V 10A (Tc) 900 mOhm @ 2A, 10V 4.5V @ 250µA 34nC @ 10V 1650pF @ 50V 10V ±30V
TK28A65W,S5X
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RFQ
1,089
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 27.6A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 650V 27.6A (Ta) 110 mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75nC @ 10V 3000pF @ 300V 10V ±30V
TK6A65D(STA4,Q,M)
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RFQ
3,062
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 650V 6A (Ta) 1.11 Ohm @ 3A, 10V 4V @ 1mA 20nC @ 10V 1050pF @ 25V 10V ±30V
TK8A65D(STA4,Q,M)
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RFQ
1,480
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5A TO-220SIS π-MOSVII Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 650V 8A (Ta) 840 mOhm @ 4A, 10V 4V @ 1mA 25nC @ 10V 1350pF @ 25V 10V ±30V