- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 5A, 10V (1)
- 140 mOhm @ 12A, 10V (1)
- 179 mOhm @ 8.5A, 10V (1)
- 190 mOhm @ 12.5A, 10V (1)
- 190 mOhm @ 7.3A, 10V (1)
- 190 mOhm @ 9A, 10V (1)
- 250 mOhm @ 6.9A, 10V (1)
- 280 mOhm @ 4.4A, 10V (1)
- 290 mOhm @ 7.5A, 10V (1)
- 300 mOhm @ 6.9A, 10V (1)
- 330 mOhm @ 6A, 10V (1)
- 380 mOhm @ 3.2A, 10V (1)
- 399 mOhm @ 5.5A, 10V (1)
- 63 mOhm @ 21A, 10V (1)
- 650 mOhm @ 3.5A, 10V (1)
- 720 mOhm @ 6A, 10V (1)
- 79 mOhm @ 16.5A, 10V (1)
- 99 mOhm @ 16A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,795
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 25A TO262 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 357W (Tc) | N-Channel | - | 650V | 25A (Tc) | 190 mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | 1278pF @ 100V | 10V | ±30V | |||
|
VIEW |
2,794
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 17.5A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 151W (Tc) | N-Channel | - | 650V | 17.5A (Tc) | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | 1850pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
3,526
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 7A TO262F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 104W (Tc) | N-Channel | - | 650V | 7A (Tc) | 650 mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | 434pF @ 100V | 10V | ±30V | |||
|
VIEW |
918
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 13.8A TO262 | CoolMOS™ E6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 104W (Tc) | N-Channel | - | 650V | 13.8A (Tc) | 280 mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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|
VIEW |
3,699
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 12A TO262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 278W (Tc) | N-Channel | - | 650V | 12A (Tc) | 720 mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,613
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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|
VIEW |
3,375
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 11A TO262 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 198W (Tc) | N-Channel | - | 650V | 11A (Tc) | 399 mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2nC @ 10V | 646pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,850
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 18A I2PAK | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | 1434pF @ 100V | 10V | ±25V | |||
|
VIEW |
3,899
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,485
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 15A TO262 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 208W (Tc) | N-Channel | - | 650V | 15A (Tc) | 290 mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2nC @ 10V | 841pF @ 100V | 10V | ±30V | |||
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|
VIEW |
1,226
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 10A TO262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 250W (Tc) | N-Channel | - | 650V | 10A (Tc) | 1 Ohm @ 5A, 10V | 4.5V @ 250µA | 33nC @ 10V | 1645pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,063
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 33A I2PAK | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 190W (Tc) | N-Channel | - | 650V | 33A (Tc) | 79 mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | 4650pF @ 100V | 10V | ±25V | |||
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|
VIEW |
1,304
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 32A I2PAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 250W (Tc) | N-Channel | - | 650V | 32A (Tc) | 99 mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | 10V | ±25V | |||
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|
VIEW |
3,517
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 42A I2PAK-3 | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 250W (Tc) | N-Channel | - | 650V | 42A (Tc) | 63 mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | 10V | ±25V | |||
|
VIEW |
3,036
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 24A I2PAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 190W (Tc) | N-Channel | - | 650V | 24A (Tc) | 140 mOhm @ 12A, 10V | 4V @ 250µA | 41.5nC @ 10V | 1790pF @ 100V | 10V | ±25V | |||
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|
VIEW |
3,969
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,182
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 12A I2PAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 110W (Tc) | N-Channel | - | 650V | 12A (Tc) | 330 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 770pF @ 100V | 10V | ±25V | |||
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|
VIEW |
3,921
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 17A I2PAK | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | - | 650V | 17A (Tc) | 179 mOhm @ 8.5A, 10V | 5V @ 250µA | 50nC @ 10V | 1950pF @ 100V | 10V | ±25V | |||
