Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPW65R125C7XKSA1
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3,209
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Infineon Technologies MOSFET N-CH 650V TO247 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 101W (Tc) N-Channel - 650V 18A (Tc) 125 mOhm @ 8.9A, 10V 4V @ 440µA 35nC @ 10V 1670pF @ 400V 10V ±20V
AOK18N65L
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2,907
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 650V 18A TO247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 417W (Tc) N-Channel - 650V 18A (Tc) 390 mOhm @ 9A, 10V 4.5V @ 250µA 68nC @ 10V 3785pF @ 25V 10V ±30V
STW20N65M5
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RFQ
1,701
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STMicroelectronics MOSFET N-CH 650V 18A TO247 MDmesh™ V Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 130W (Tc) N-Channel - 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 45nC @ 10V 1345pF @ 100V 10V ±25V
IPW60R180P7XKSA1
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RFQ
1,635
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Infineon Technologies MOSFET N-CH 650V 18A TO247-3 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 72W (Tc) N-Channel - 650V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V