- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,186
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO247-4 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4 | 171W (Tc) | N-Channel | - | 650V | 33A (Tc) | 65 mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | 3020pF @ 400V | 10V | ±20V | |||
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VIEW |
1,596
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO247-4 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4 | 128W (Tc) | N-Channel | - | 650V | 24A (Tc) | 95 mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | 10V | ±20V | |||
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VIEW |
2,256
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO247-4 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | PG-TO247-4 | 446W (Tc) | N-Channel | - | 650V | 75A (Tc) | 19 mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215nC @ 10V | 9900pF @ 400V | 10V | ±20V |