- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,805
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
2,257
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 7A LPT | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (D2PAK) | 40W (Tc) | N-Channel | - | 600V | 7A (Tc) | 620 mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | 390pF @ 25V | 10V | ±20V | ||||
VIEW |
883
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 8SOIC | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2W (Tc) | N-Channel | - | 600V | 630mA (Tc) | 5 Ohm @ 500mA, 10V | 4V @ 1mA | 20nC @ 10V | 310pF @ 10V | 10V | ±30V | ||||
VIEW |
677
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | ||||
VIEW |
1,995
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||||
VIEW |
2,006
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 12A | MDmesh™ DM2 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 90W (Tc) | N-Channel | - | 600V | 12A (Tc) | 295 mOhm @ 6A, 10V | 5V @ 250µA | 20nC @ 10V | 800pF @ 100V | 10V | ±25V | ||||
VIEW |
3,540
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 8A LPTS | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 50W (Tc) | N-Channel | - | 600V | 8A (Tc) | 950 mOhm @ 4A, 10V | 4V @ 1mA | 20nC @ 10V | 580pF @ 25V | 10V | ±30V |