Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB180N04S4H0ATMA1
RFQ
VIEW
RFQ
2,300
In-stock
Infineon Technologies MOSFET N-CH 40V 180A TO263-7-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 250W (Tc) N-Channel - 40V 180A (Tc) 1.1 mOhm @ 100A, 10V 4V @ 180µA 225nC @ 10V 17940pF @ 25V 10V ±20V
IPB180N04S4H0ATMA1
RFQ
VIEW
RFQ
3,567
In-stock
Infineon Technologies MOSFET N-CH 40V 180A TO263-7-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 250W (Tc) N-Channel - 40V 180A (Tc) 1.1 mOhm @ 100A, 10V 4V @ 180µA 225nC @ 10V 17940pF @ 25V 10V ±20V
IPB180N04S4H0ATMA1
RFQ
VIEW
RFQ
1,387
In-stock
Infineon Technologies MOSFET N-CH 40V 180A TO263-7-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 250W (Tc) N-Channel - 40V 180A (Tc) 1.1 mOhm @ 100A, 10V 4V @ 180µA 225nC @ 10V 17940pF @ 25V 10V ±20V
IPB240N04S41R0ATMA1
RFQ
VIEW
RFQ
3,033
In-stock
Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 231W (Tc) N-Channel - 40V 240A (Tc) 1 mOhm @ 100A, 10V 4V @ 180µA 221nC @ 10V 17682pF @ 25V 10V ±20V