Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP1M006A070FH
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2,096
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Global Power Technologies Group MOSFET N-CH 700V 5A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel 700V 5A (Tc) 1.65 Ohm @ 2.5A, 10V 4V @ 250µA 23nC @ 10V 1500pF @ 25V 10V ±30V
GP1M006A070F
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3,152
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Global Power Technologies Group MOSFET N-CH 700V 5A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 39W (Tc) N-Channel 700V 5A (Tc) 1.65 Ohm @ 2.5A, 10V 4V @ 250µA 23nC @ 10V 1500pF @ 25V 10V ±30V
IPS65R650CEAKMA1
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3,966
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Infineon Technologies MOSFET N-CH 700V 10.1A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 86W (Tc) N-Channel 700V 10.1A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V