- Manufacture :
- Part Status :
- Technology :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||
|
VIEW |
2,723
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V D3PAK | Obsolete | Tube | SiCFET (Silicon Carbide) | - | Through Hole | TO-247-3 | TO-247 | - | - | 700V | 35A | - | - | - | - | - | - | |||
|
VIEW |
2,631
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V TO247 | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 176W (Tc) | N-Channel | 700V | 35A (Tc) | 145 mOhm @ 10A, 20V | 2.5V @ 1mA | 67nC @ 20V | 1035pF @ 700V | 20V | +25V, -10V | |||
|
VIEW |
2,985
In-stock
|
Microsemi Corporation | MOSFET N-CH 700V TO247 | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 556W (Tc) | N-Channel | 700V | 110A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | |||
|
VIEW |
2,700
In-stock
|
IXYS | MOSFET N-CH | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | 700V | 12A (Tc) | 300 mOhm @ 6A, 10V | 4.5V @ 250µA | 19nC @ 10V | 960pF @ 25V | 10V | ±30V |