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Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,142
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 4.5V | - | 4.5V | ±20V | ||||
VIEW |
2,434
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 8.3A (Ta) | 25 mOhm @ 7A, 4.5V | 3V @ 250µA | 14nC @ 5V | - | 4.5V | ±20V |